Discrete Power Devices
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Latest articles from 'Discrete Power Devices'
News releases from this sub-category
Showing 26-50 of 432 articles
Vishay Mosfet has Schottky diode
Vishay Intertechnology has announced a tiny 20V n-channel power Mosfet plus Schottky diode.
News from Vishay Siliconix, Dec 16, 2008
Cissoid announces high temperature bridge driver
Cissoid has announced the release of a high temperature full bridge driver guaranteed for operation between -55C and +225C.
News from Cissoid, Dec 15, 2008
Interfet offers discontinued JFET devices
Interfet Corp offers a second source supply for many discontinued junction field effect transistor devices (JFET).
News from Rhopoint Components, Nov 5, 2008
Linear reveals current sense amplifier
Linear Technology has announced the LT6107, a military-plastic-grade (MP-grade) high-side current sense amplifier specified for operation from -55 to 150C.
News from Linear Technology Corp, Nov 3, 2008
MagnaChip launches N-P Multi-Chip MOSFET series
MagnaChip Semiconductor has announced the launch of its MOSFET series for use in backlight units of LCD TVs and LCD monitors.
News from MagnaChip Semiconductor, Sep 2, 2008
LDMOS technology aids UHF transmitter efficiency
Freescale's laterally diffused MOS UHF technology will enable Harris to produce its most compact and power-efficient UHF transmitters.
News from Freescale Semiconductor, Aug 28, 2008
Small signal MOSFETs run from 1.2V supplies
Devices operate with a gate drive voltage of just 1.2V, and so are ideally suited to high-speed and analogue switching in portable battery-powered equipment.
News from Toshiba Electronics Europe, Aug 27, 2008
Power MOSFETs offer lower on-resistance
P-channel power MOSFET family in PowerPAK SC-75 packages includes several devices rated from 8 to 30V that are industry firsts for their voltage ratings in this package type.
News from Vishay Siliconix, Aug 21, 2008
Triacs come in isolated packages
Latest triacs are ideal for industrial and control applications where isolation voltage is critical and safety is a primary concern.
News from ON Semiconductor, Aug 15, 2008
Transistors and diodes come in smaller packages
Smaller low-profile packages allow design engineers to use them in such applications as mobile handsets.
News from ON Semiconductor, Aug 8, 2008
Two MOSFETs in one boost PSU efficiency
Device incorporates power MOSFETs of two different types, composing a synchronous rectification DC/DC convertor in a high-thermal-radiation package measuring 5.1 x 6.1 x 0.8mm.
News from Renesas Technology Europe, Jul 31, 2008
High-current MOSFET raises power efficiency
High current rating allows engineers to design-out multiple parallel MOSFETs to save board space and BOM costs.
News from STMicroelectronics, Jul 17, 2008
Bipolar junction transistors improve audio
Extended beta improves linearity and reduces total harmonic distortion, improving the fidelity and overall sound of audio products.
News from Fairchild Semiconductor, Jul 3, 2008
MOSFETs aim to reduce power consumption
Devices are particularly suited for the power supply topology of a VGA card, contributing to the higher efficiency of buck topology.
News from MagnaChip Semiconductor, Jun 30, 2008
Diode networks are custom applications
Networks offer new levels of performance for product applications where flexible high density space-saving configurations are required to address signal integrity issues.
News from BI Technologies Electronic Components Division, Jun 25, 2008
Transistors boost transmitter efficiency
High-frequency power MOSFETs claim the industry's highest efficiency class with up to 60% added power efficiency.
News from Renesas Technology Europe, Jun 24, 2008
Smaller MOSFET cuts on-resistance at low voltage
With an ultracompact 1.2 x 1.0mm footprint, the Si8445DB is 20% smaller than the industry's next-smallest device, while offering the same slim 0.59mm profile.
News from Vishay Siliconix, Jun 19, 2008
Novel FETs boost power and gain
The HVV1011-035 is a 35W surface mount RF power transistor for IFF, TCAS and Mode-S applications, and the HVV1214-200 is a 200W RF power transistor for ground-based radar applications.
News from HVVi Semiconductors, Jun 17, 2008
Load switches save portable power
Modified MLF package technology extends battery life by greatly reducing the on-resistance of high-side load switches down to 28mohm.
News from Micrel, Jun 17, 2008
MOSFETs are optimised for industrial batteries
N-channel devices are based on IR trench MOSFET technology with superior on-state resistance for improved system efficiency and high reliability.
News from International Rectifier, Jun 16, 2008
Hall-effect latches stay stable
Dynamic offset cancellation reduces the residual offset voltage normally caused by device package overmoulding.
News from Allegro MicroSystems Europe, Jun 4, 2008
Transistors are optimised for display designs
MOSFETs provide excellent switching performance and enable designers to save overall system cost by minimising required board space.
News from MagnaChip Semiconductor, May 30, 2008
Miniature MOSFETs maintain lower on-resistance
The PowerPAK SC-70 combines the tiny footprint of the SC-70 package with on-resistance comparable to the larger TSOP-6.
News from Vishay Siliconix, May 29, 2008
Transistors switch power supply designs
Emitter-switched bipolar transistor switches enable single-switch flyback topology in universal-input convertors.
News from STMicroelectronics, May 22, 2008
Low-resistance MOSFETs adopt rugged package
The rugged TO-247 package provides a larger area for heatsinking to improve thermal dissipation compared with a TO-220 package.
News from International Rectifier, May 19, 2008
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