Discrete Power Devices
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Latest articles from 'Discrete Power Devices'
News releases from this sub-category
Showing 151-175 of 432 articles
Californian power devices come to the UK
Anglia has signed a UK and Ireland distribution agreement with Diodes Incorporated, a manufacturer of discrete semiconductor devices based in Westlake Village, California.
News from Anglia, Feb 22, 2006
Bipolars pair up for driving duties
Combining complementary NPN and PNP transistors in the SOT236 package, the ZXTC2045E6 produces the drive needed to switch high power MOSFETs and IGBTs in power supply designs.
News from Zetex, Feb 14, 2006
MOSFETs come together to save space for PoE
The IRF4000 from International Rectifier is a 100V-rated device integrating four HEXFET MOSFETs into a single power MLP package for power-over-Ethernet applications.
News from International Rectifier, Feb 6, 2006
Diodes come together to save space
A new series of diode arrays features 4 to 14 pin counts, in single inline packages for space saving on printed circuit boards.
News from BI Technologies Electronic Components Division, Feb 3, 2006
High-voltage MOSFET gets things started
A new high-voltage MOSFET is designed to handle the requirements of prebias supply circuitry.
News from Zetex, Feb 1, 2006
Diodes cut down switching losses
Available now in the UK from Neutron is the Cree range of silicon carbide Schottky diodes.
News from Neutron, Jan 31, 2006
Fast switching MOSFETs take drivers onboard
Two new high-speed convertor solutions integrate the control MOSFET, the synchronous MOSFET, and driver circuit in a low-profile, high-performance PowerPAK MLF 10x10 package.
News from Vishay Siliconix, Jan 24, 2006
Audio transistors wipe out warm-up time
A new family of ThermalTrak output transistors come with the novel feature of internal bias control.
News from ON Semiconductor, Jan 23, 2006
Power MOSFETs are ideal for dynamic loads
Ixys has expanded its portfolio of 500 and 1000V depletion-mode power MOSFETs with new current ratings, package options and reduced costs.
News from Ixys Semiconductor, Jan 23, 2006
Power semiconductors include custom options
Easby Electronics now offers customised discrete power semiconductors through its franchise with Fagor Electronica, as well as a very wide standard offering of SCRs and triacs.
News from Easby Electronics, Jan 17, 2006
Dual JFETs promise a perfect match
A new family of ultra-low-noise dual JFETs offers a better performing, less time consuming and cheaper solution than matching individual devices.
News from Linear Integrated Systems, Jan 13, 2006
Quad PIN diodes simplify attenuator design
A new series of pi-connected quad PIN diodes simplify the design and lower the costs of voltage-controlled diode pi attenuators operating over the 300kHz to 3GHz frequency range.
News from Avago Technologies, Jan 11, 2006
Distributor gets technical for Ixys
Specialist power electronic component distributor Europower Components has recently signed up with Ixys.
News from Europower Components, Jan 4, 2006
Tubes deal is a UK exclusive
Link Microtek has been appointed as exclusive UK representative for L-3 Communications Electron Devices.
News from Link Microtek, Dec 14, 2005
Novel package cools MOSFETs both ways
The novel PolarPAK package uses double-sided cooling to reduce thermal resistance, package resistance and package inductance for a more efficient, faster-switching power MOSFET.
News from Vishay Siliconix, Dec 13, 2005
Compact packaging cuts MOSFET on-resistance
Seventeen new power MOSFETs offer exceptionally low on-resistance values down to 3.7mohm in the compact PowerPAK 1212-8 package.
News from Vishay Siliconix, Nov 22, 2005
MOSFETs cut power system losses
New power MOSFETs reduce system-level power loss as much as 10% compared with "enhanced SO-8" devices in medium power 200W DC/DC bus convertor applications.
News from International Rectifier, Nov 18, 2005
Power MOSFET cuts conduction losses
The IRF6648 60V DirectFET power MOSFET features up to 30% lower device conduction losses compared with competing products.
News from International Rectifier, Nov 15, 2005
Schottky diodes are smaller and more efficient
Four new FlipKY Schottky diodes are smaller and more efficient than typical industry-standard Schottky devices.
News from International Rectifier, Oct 21, 2005
Novel transistor design cuts amplification costs
Oki Electric has developed a power transistor with dramatically improved amplifying characteristics.
News from Oki Electric, Oct 18, 2005
Bipolar transistors shrink to SOT23 packaging
Achieving the same current handling capability as much larger SOT223 equivalents, a new series of SOT23 packaged bipolar transistors will significantly reduce PCB size.
News from Zetex, Oct 10, 2005
Improved silicon technology cuts transistor losses
New high-performance low-saturation-voltage bipolar junction transistors reduce overall circuit cost while contributing to better power efficiency and longer battery life.
News from ON Semiconductor, Oct 10, 2005
IGBT optimised for induction heating
A new IGBT combines best-in-class avalanche immunity with optimised tradeoff performance between switching and conduction losses to increase system reliability and efficiency for induction heating.
News from Fairchild Semiconductor, Oct 4, 2005
MOSFETs manage more current
International Rectifier has expanded its high performance family of 75 and 100V HEXFET synchronous rectification MOSFETs with the introduction of the IRF2907ZS-7PPbF 160A-rated, seven-pin device.
News from International Rectifier, Oct 3, 2005
Power switching devices handle higher currents
Crydom now offers a wide range of SCRs with current ratings from 15 to 55A and triacs from 6 to 40A in the popular TO-220AB package with lead-free finishes on all connections.
News from Crydom International, Sep 6, 2005
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