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Discrete Power Devices

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Latest articles from 'Discrete Power Devices'

News releases from this sub-category

Showing 101-125 of 432 articles

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MOSFETs cut figure of merit for display switching

N-channel MOSFETs provide industry-leading system efficiency and space optimisation in plasma display panel applications.

News from Fairchild Semiconductor, Feb 16, 2007

Power transistor is made for Chinese basestations

High-power multistage RF power LDMOS FET is characterised for TD-SCDMA wireless basestations.

News from Freescale Semiconductor, Feb 14, 2007

SiC power devices reach new highs

Cree is shipping production quantities of a new 50A Zero Recovery Schottky rectifier operating at 1200V.

News from Cree, Feb 12, 2007

20V MOSFETs switch down to 1.8V

Three new N-channel enhancement-mode MOSFETs are developed specifically for applications with limited drive voltage availability.

News from Zetex, Jan 31, 2007

More power devices from STMicroelectronics

ST linear IC and discrete device range expands with a new range of IGBTs, increased coverage of surface mount package options and additions to MOSFET ranges.

News from Rapid Electronics, Jan 31, 2007

TTI stars for Vishay in Europe

In appreciation of best overall revenue growth and geographical coverage, Vishay Europe has honoured TTI Europe with its 2006 European Sales Distribution Award.

News from TTI Europe, Jan 25, 2007

N-channel MOSFETs feature double-sided cooling

N-channel 20, 30 and 40V PolarPAK MOSFETs with double-sided cooling give designers a new way to reduce system size and cost through better MOSFET thermal performance.

News from Vishay Siliconix, Jan 23, 2007

Power MOSFET is flexible about its input voltage

150V MOSFET for isolated DC/DC convertors operates from a wide range, 36 to 75V universal telecommunications input and 48V fixed input systems.

News from International Rectifier, Jan 17, 2007

Packages enhance power MOSFET thermal performance

Eight N-channel power MOSFETs in innovative PowerPAK ChipFET packages offer advanced thermal performance in a compact 3 x 1.8mm footprint.

News from Vishay Siliconix, Jan 16, 2007

MOSFET is made for high current switches

The KMB050N60P is an N-channel enhancement-mode MOSFET rated at 50A and 60V drain-source voltage in planar-stripe technology.

News from First Components, Jan 15, 2007

Dual power MOSFET is speedy switcher

KEC, the largest manufacturer of discrete electronic components in Korea, has announced a 4.8A dual power MOSFET in an SO-8 surface mount package.

News from First Components, Jan 4, 2007

Gallium nitride power transistor

Panasonic has developed a Gallium Nitride (GaN) power transistor with normally off operation.

News from Panasonic Industrial Europe, Dec 15, 2006

MOSFET is made for portable applications

Small-footprint P-channel MOSFET offers optimal thermal and electrical performance for power conversion, charging and load management in high-volume portable electronics.

News from Fairchild Semiconductor, Nov 30, 2006

Thyristor modules are made for soft starters

Semikron has introduced the Semistart family of antiparallel uninsulated thyristor modules, which has been designed specifically for use in soft-start devices.

News from Semikron, Nov 27, 2006

Power switches are tailored for DC/DC duties

100, 200 and 220V N-channel UltraFET devices come in ultracompact moulded leadless packages.

News from Fairchild Semiconductor, Nov 21, 2006

Miniature MOSFETs cut on-resistance

Small-signal high-efficiency P-channel MOSFETs combine high current switching functionality with low on-resistance, low voltage operation and ultracompact form factors.

News from Toshiba Electronics Europe, Nov 6, 2006

Power MOSFET boasts 95% efficiency

Power MOSFET features benchmark DirectFET package technology paired with IR's latest 200V HEXFET MOSFET silicon technology to achieve 95% efficiency.

News from International Rectifier, Nov 6, 2006

Bipolar junction transistors in smaller packages

Range of low-saturation-voltage bipolar junction transistors now includes WDFN6, WDFN3, SOT-23, SOT-563 and ChipFET packages.

News from ON Semiconductor, Oct 27, 2006

Load switches ensure efficient use of batteries

P-channel load switches are optimised for high-side operation in 1.5 to 5V load-switching applications.

News from Vishay Siliconix, Oct 25, 2006

Zener diodes cover a wide range

Following its appointment by EIC Semi, Focus EDL has made available a very wide range of Zener diodes covering Zener voltages up to 200V and power up to 5W.

News from Focus EDL, Oct 23, 2006

New life for valve range

Expanded range of thermionic valves includes matched pairs and quads as well as a replacement for the world's most popular valve.

News from Rapid Electronics, Oct 23, 2006

Distribution deal covers powerful range

Power Products International has been appointed the official UK distributor for International Rectifier High Power Group.

News from Power Products International, Oct 9, 2006

Power choke coil for vehicles

Panasonic Electronic Devices has brought out a power choke coil for automotive applications.

News from Panasonic Industrial Europe, Sep 28, 2006

Diodes don diminutive packaging

A novel diode package measures a mere 1.0 x 0.6mm with a 0.4mm profile, yet delivers impressive performance.

News from ON Semiconductor, Sep 21, 2006

MOSFETs cut power for automotive designs

Low-voltage PowerTrench MOSFETs are designed to optimise efficiency, performance and board space in automotive applications.

News from Fairchild Semiconductor, Sep 15, 2006

Showing 101-125 of 432 articles

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