Discrete Power Devices
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Latest articles from 'Discrete Power Devices'
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Showing 251-275 of 432 articles
High voltage rating for fast recovery diodes
The 60APU06 and 60EPU06 are platinum (Pt) diffused ultrafast-recovery epitaxial diodes each rated at 600V.
News from International Rectifier, May 18, 2004
Increased power handling from compact PNP
The ZX5T2E6 PNP transistor is billed as taking the performance of miniature SOT23-6 packaged parts to a new high with its power handling capability of 70W.
News from Zetex, May 18, 2004
MOSFETs drop gate charge and on-resistance
Two new power MOSFETs combine the extremely low gate charge values enabled by WFET technology with the very low on-resistance values of TrenchFET Gen II technology.
News from Vishay Siliconix, May 12, 2004
IGBT made for induction heating
A new 1000V/60A IGBT delivers superior switching and conduction characteristics as well as avalanche ruggedness in induction heating (IH) applications.
News from Fairchild Semiconductor, May 4, 2004
Small-signal MOSFETs take diodes onboard
Single-chip MOSFET and Schottky diode devices simplify design of high-efficiency DC/DC convertors in portable applications.
News from Toshiba Electronics Europe, Apr 30, 2004
MOSFETs made for automotive power management
A new logic-level trench MOSFET family combines minimum device on-resistance with lower temperature coefficient and the avalanche capability required by the harsh automotive environment.
News from International Rectifier, Apr 26, 2004
Transistor aids basestation upgrades
Agilent Technologies has released its highest linearity E-pHEMT (enhancement-mode pseudomorphic high-electron-mobility transistor) field effect transistor.
News from Agilent Technologies, Apr 20, 2004
Diodes offer dramatic space savings
The latest ultraminiature surface-mount variable-capacitance diodes from Toshiba are designed to save space in radio and telecommunication equipment and other ultra high frequency designs.
News from Toshiba Electronics Europe, Apr 19, 2004
Tiny claims for power MOSFET
The new N-channel Si7820DN TrenchFET power MOSFET is the smallest 200V device on the market suited for power switching.
News from Vishay Siliconix, Apr 7, 2004
Ultraminiature PIN diode saves board space
Toshiba has expanded its family of PIN diodes with a new ultraminiature surface-mount device that will allow engineers to significantly reduce board space in UHF and SHF switching applications.
News from Toshiba Electronics Europe, Apr 6, 2004
Power MOSFETs complete PSU design portfolio
With the addition of a new line of 600V MOSFETs, ON Semiconductor now offers a single source for all significant active components for power supply designs.
News from ON Semiconductor, Apr 1, 2004
MOSFETs cut on-resistance for automotive uses
Automotive 12V boardnet high-side switches and electric motor drives are the target applications for a record-setting new family of P-channel MOSFETs from Siliconix.
News from Vishay Siliconix, Mar 31, 2004
Licence to proliferate BGA power packaging
Fairchild Semiconductor has licensed Gem Services to offer one of Fairchild's most advanced MOSFET packaging technologies as open tooling for the power semiconductor market.
News from Fairchild Semiconductor, Mar 22, 2004
Power switch protects Li-ion battery packs
The FDC6000NZ is a dual N-channel MOSFET device that combines Fairchild's PowerTrench MOSFET silicon technology with a SuperSOT-6 FLMP (flipchip in a leaded moulded package).
News from Fairchild Semiconductor, Mar 17, 2004
Ultraminiature MOSFETs boost power density
A new range of ultraminiature surface-mount power MOSFETs feature on-resistance ratings as low as 35mohm and can handle currents up to 3.5A.
News from Rohm Electronics (UK), Mar 8, 2004
MOSFETs cut power supply losses
Two new high-voltage MOSFETs use Fairchild's new SuperFET technology to significantly reduce system power loss, increasing efficiency and reliability in switch-mode PSU and PFC applications.
News from Fairchild Semiconductor, Feb 26, 2004
Novel package keeps MOSFETs cooler
A new family of TrenchFET power MOSFETs come in novel reverse-lead TO-252 DPAK packages.
News from Vishay Siliconix, Feb 25, 2004
MOSFETs claim new lows of on-resistance
A new trio of 250V N-channel TrenchFET power MOSFETs offer the lowest on-resistance available in the SO-8, PowerPAK SO-8 and D2PAK packages for this voltage rating.
News from Vishay Siliconix, Feb 2, 2004
30V MOSFETs qualify for automotive uses
Four new 30V, N-channel PowerTrench MOSFETs deliver high efficiency and excellent ruggedness in a small footprint package, meeting the requirements for space-sensitive automotive applications.
News from Fairchild Semiconductor, Jan 30, 2004
MOSFET relays shrink into SSOPs
At two-thirds the size of competing alternatives, a new range of ultraminiature MOSFET relays is believed to be the world's smallest with SSOP packaging.
News from Omron Electronics, Jan 22, 2004
Lead-free MOSFETs keep their heads down onboard
A new lead-free power MOSFET package offers full pin compatibility with existing TO-220 devices, while delivering a 13.5% reduction in PCB mounting height and significantly faster switching speeds.
News from Toshiba Electronics Europe, Dec 25, 2003
New process boosts power MOSFET specs
The new NP-series of power MOSFETs combines NEC's innovative trench technology with an advanced packaging solution to achieve much higher current ratings.
News from Sunrise Electronics, Dec 17, 2003
Power switches cut adapter losses
Standby power losses in power adapters and chargers can be reduced using efficient new power switches and regulators.
News from Abacus Group, Dec 10, 2003
Custom specs for low-loss limiter diodes
The MLP 7100 series of limiter diodes are application specific PIN devices that are specially fabricated to have particularly low loss and fast recovery time over a frequency range from 100MHz to 22GH
News from Micrometrics, Dec 9, 2003
IGBTs aim for rugged performance
Two new rugged and reliable power IGBTs aim to improve appliance and industrial motor drive performance.
News from International Rectifier, Dec 3, 2003
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