Product category: Discrete Power Devices
News Release from: International Rectifier | Subject: Logic-Level, Q101-Qualified Trench MOSFETs
Edited by the Electronicstalk Editorial Team on 23 April 2004
MOSFETs made for
automotive power management
A new logic-level trench MOSFET family combines minimum device on-resistance with lower temperature coefficient and the avalanche capability required by the harsh automotive environment
Five new logic-level trench HEXFET power mosfets are based on a fabrication process that combines minimum device on-resistance with lower temperature coefficient and the avalanche capability required by the harsh automotive environment. As a result, in many applications they can enable a shift from larger-packaged devices such as D2Pak to smaller D-Pak devices, reducing power dissipation and system size.
This article was originally published on Electronicstalk on 23 April 2004 at 8.00am (UK)
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IR's new logic level trench family has all the features of IR's standard gate trench devices and can meet gate drive requirements as low as 4.5V.
The logic-level gate drive requirements that the new family meets allow the devices to simplify power management integration into microprocessor-controlled circuits in next-generation body electronics such as door modules, window lifts and lighting.
Under-the-bonnet applications for the new logic-level devices include electrical power steering (EPS), brush and brushless DC motor control and antilock braking systems (ABS).
The new automotive mosfets feature improved efficiency, switching performance, ruggedness and lower gate charge for high-power automotive applications.
All devices are Q101-qualified and rated for both single-pulse and repetitive avalanche up to the maximum junction temperature of 175C.
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