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Product category: Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si4368DY and Si7668DP
Edited by the Electronicstalk Editorial Team on 12 May 2004
MOSFETs drop gate charge and
on-resistance
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Two new power MOSFETs combine the extremely low gate charge values enabled by WFET technology with the very low on-resistance values of TrenchFET Gen II technology.
Two new power mosfets combine the extremely low gate charge values enabled by WFET technology with the very low on-resistance values of TrenchFET Gen II technology The two power mosfets are designed for low-side operation in synchronous buck (single- and multiphase configurations) DC/DC convertors in notebook PCs, servers, and VRM modules, as well as in synchronous rectification in fixed telecomms systems
This article was originally published on Electronicstalk on 17 Jun