News Release from: Rohm Electronics (UK)
Edited by the Electronicstalk Editorial Team on 5 March 2004
Ultraminiature MOSFETs boost power density
A new range of ultraminiature surface-mount power MOSFETs feature on-resistance ratings as low as 35mohm and can handle currents up to 3.5A.
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A new range of ultraminiature surface-mount power mosfets feature on-resistance ratings as low as 35mohm and can handle currents up to 3.5A. Ideal for power management applications in portable equipment, the new devices are supplied in Rohm's new 3-, 5- and 6-pin high-power, ultraminiature TUMT packaging. These packages have footprints of just 2.0 x 1.7mm.
A board mounting profile of 0.85mm is 25% lower than previous UMT (SOT323/363) style devices, and power dissipation ratings of 500mW represent a 150% increase over UMT alternatives.
The new power mosfets are available in N-channel and P-channel versions and in single- and dual-mosfet formats that incorporate two N-channel or two P-channel configurations.
Rohm also offers dual-channel variants that combine N- and P-channel mosfets in a single device.
Some of the devices are also available with a built-in Schottky barrier diode for simplified design of DC/DC convertors.
Driving voltages for Rohm's new mosfets are rated at either 2.5or 4.0V, depending on the specific device chosen.
On-resistance ratings (at 4.5V) range from 35 to 280mohm, and current handling capabilities range from 0.5 to 3.5A.
The TUMT power mosfets are fully compatible with modern automated manufacturing equipment, and use a flat lead construction that ensures accurate self-alignment during assembly.
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