Metal matrix makes IGBT baseplates
A CPS Corp product story
Edited by the Electronicstalk editorial team May 3, 2005
The AlSiC (aluminium silicon carbide) metal matrix composite from CPS Corp is ideally suited as a thermal management material for insulated gate bipolar transistor (IGBT) baseplates.
The AlSiC (aluminium silicon carbide) metal matrix composite from CPS Corp is ideally suited as a thermal management material for insulated gate bipolar transistor (IGBT) baseplates.
These plates can be used in high-power traction, power control, and fly-by-wire applications, which require thermal performance reliability.
The IGBT baseplates are lightweight and offer high strength.
The thermal performance reliability AlSiC composites offer is ideal for the production of high reliability military electronics.
AlSiC's tailored, isotropic coefficient of thermal expansion (CTE) can be adjusted for specific applications by modifying the Al-metal/SiC-particulate ratio to match the CTE of the die or substrate.
AlSiC's CTE matching eliminates the need for thermal interface stacking and ensures IGBT baseplate compatibility with ceramic substrate attachments for high-power applications.
Coupled with its superior CTE matching, AlSiC's high thermal conductivity offers superior reliability and longevity by preventing the bowing and flexing of packaging and substrate material.
Traditional packaging materials with lower thermal dissipation can cause delamination, leading to air gaps and failure.
Unlike baseplates made with copper and aluminium, AlSiC baseplates survive thousands of cycles without delamination of the substrate from the baseplate.
The CPS AlSiC near net-shape fabrication process both produces the composite material and fabricates the product geometry, allowing for the design of IGBT baseplates with a dome profile.
This geometry improves thermal interface contact with cold plates and coolers, adding to AlSiC's advanced thermal management qualities.
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