Product category: Discrete Power Devices
News Release from: Zetex | Subject: ZXMN2B03E6, ZXMN2B14FH and ZXMN2B01F
Edited by the Electronicstalk Editorial Team on 31 January 2007
20V MOSFETs switch down to 1.8V
Three new N-channel enhancement-mode MOSFETs are developed specifically for applications with limited drive voltage availability
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Zetex Semiconductors has introduced three new N-channel enhancement-mode MOSFETs, developed specifically for applications with limited drive voltage availability. The 20V ZXMN2B03E6 (SOT236), ZXMN2B14FH and ZXMN2B01F (both SOT23) are capable of low loss switching at 1.8V, enabling them to be operated from two 1.2V cells or a single Li-ion cell.
Their ultralow gate drive also means they can be driven directly by logic gates.
On-resistance for the three MOSFETs is guaranteed to be less than 75, 100 and 200mohm, respectively, at 1.8V and 40, 55 and 100mohm at 4.5V.
This makes them ideal for low voltage roles including level shifting for high side disconnect switches, external switching for boost convertor circuits and buffering low voltage microcontrollers and loads such as motors and solenoids.
Fast switching performance is another key feature of the company's proprietary UMOS technology.
For example, the ZXMN2B01F rise and fall times are just 3.6 and 10.5ns at 4.5V and 1A.
Pricing in 1000-unit volumes is US $0.165 (ZXMN2B01F), US $0.285 (ZXMN2B03E6) and US $0.0270 (ZXMN2B14F).
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