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Product category: Discrete Power Devices
News Release from: International Rectifier | Subject: IRF6641TRPbF
Edited by the Electronicstalk Editorial Team on 06 November 2006
Power MOSFET boasts 95% efficiency
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Power MOSFET features benchmark DirectFET package technology paired with IR's latest 200V HEXFET MOSFET silicon technology to achieve 95% efficiency.
International Rectifier has introduced the IRF6641TRPbF power MOSFET featuring IR's benchmark DirectFET package technology paired with IR's latest 200V HEXFET MOSFET silicon technology to achieve 95% efficiency IR's new 200V DirectFET device is designed for use in isolated DC/DC convertor designs operating from a universal input range (36 to 75V)