Product category: Discrete Power Devices
News Release from: Vishay Siliconix | Subject: N-channel PowerPAK ChipFET devices
Edited by the Electronicstalk Editorial Team on 16 January 2007
Packages enhance power
MOSFET thermal performance
Eight N-channel power MOSFETs in innovative PowerPAK ChipFET packages offer advanced thermal performance in a compact 3 x 1.8mm footprint
Vishay Intertechnology has released eight N-channel power MOSFETs in innovative PowerPAK ChipFET packages that offer advanced thermal performance in a compact 3 x 1.8mm footprint. Featuring a broad variety of configurations and voltages, the new devices allow designers to easily replace larger power MOSFETs in a wide range of power-conversion applications.
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As a space-saving alternative to MOSFETs in the much larger SO-8 package, the new PowerPAK ChipFET devices deliver higher power density by offering the same 3W maximum power dissipation with an 81% smaller footprint area and a 48% thinner height profile (0.8mm).
For optimised design efficiency, N-channel power MOSFETs in Vishay's new PowerPAK ChipFET family are designed for point-of-load, synchronous rectification, and logic-level DC/DC conversion applications in low-power computer and fixed telecomms applications where space is at a premium.
N-channel PowerPAK ChipFET devices will also be used as load switches in portable electronic systems and notebook PCs, delivering footprint savings of 33%, a 2% thinner height profile and a 9% reduction in on-resistance at a 4.5V gate drive compared with power MOSFETs in the TSOP-6.
Further reading
N-channel MOSFETs feature double-sided cooling
N-channel 20, 30 and 40V PolarPAK MOSFETs with double-sided cooling give designers a new way to reduce system size and cost through better MOSFET thermal performance
Among the eight new devices announced today are single, dual and single-plus-Schottky-diode power MOSFETs, with breakdown voltage ratings from 20 to 60V.
Single N-channel power MOSFETs in the PowerPAK ChipFET family are rated for typical thermal resistance values as low as 3C/W (junction to case), with maximum on-resistance values as low as 0.015ohm in a 20V drain-to-source N-channel single-channel device and 0.039ohm in a dual-channel device.
The single-plus-Schottky-diode power MOSFETs feature on-resistance values as low as 0.039ohm and Schottky diode forward voltage of 0.375V at 1A.
All the new PowerPAK ChipFET devices are pin-compatible with products in the standard ChipFET package.
Samples and production quantities of the new PowerPAK ChipFET devices are available now, with lead times of 12 to 14 weeks for larger orders.
Pricing for US delivery in 100,000-piece quantities starts at $0.20.
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