Amp and switch front up Wi-Fi radio designs
A SiGe Semiconductor product story
Edited by the Electronicstalk editorial team Jun 23, 2004
A new power amplifier, switch and RF front-end reference design promises to improve both the performance and manufacturability of Wi-Fi systems.
A new power amplifier, switch and RF front-end reference design promises to improve both the performance and manufacturability of Wi-Fi systems.
The new SE2528L power amplifier delivers output power of up to +23dBm at 3.0% error vector magnitude (EVM) while operating in 802.11g mode.
When paired with SiGe's new SE2560L switch, which features low insertion losses and high linearity, manufacturers can design systems that achieve output power of +20dBm at the antenna.
The high output power allows users to maintain reliable wireless connections over longer distances when using access points, printers, desktop computers and other Wi-Fi-equipped consumer devices.
The devices are combined in a complete RF front-end reference design that includes all of the circuitry required between the transceiver and the antenna, including the power amplifier, enable circuitry, power detector, switch, and filtering.
The RF front-end reference design serves as a blueprint for high-performance WLAN systems, allowing manufacturers to quickly and cost-effectively develop next-generation products.
"Our new reference design offers a fully tested, proven development platform that takes the guesswork out of RF front-end design", said Andrew Parolin, Director, Wireless Power Amplifiers, SiGe Semiconductor.
"We have worked closely with our customers to develop the highest performing power amplifier and switch combination on the market".
"Using these products along with our reference design allows manufacturers to quickly deliver WLAN systems with confidence in receiving high overall performance ratings from consumers".
The SE2528L is based on SiGe's proven power amplifier architecture optimised for 802.11b and 802.11g operation.
Leveraging an advanced silicon germanium technology, the device features a market-leading combination of linearity, accuracy and stability.
The power amplifier is characterised for both 3.3 and 5V operation, and includes on-chip power enable switch, bias control circuitry, and a power detector that minimises antenna mismatch.
The SE2528L interfaces directly to the SE2560L, a double-pole, double-throw (DPDT) RF switch in a transfer configuration.
The switch is manufactured using a state-of-the-art pHEMT process that ensures the low insertion loss and high linearity required of WLAN systems.
The SE2560L is easy to use, able to connect to both antennas without an RF crossover.
The device can be used with any of SiGe Semiconductor's 2.4GHz power amplifiers.
The reference design is available now, and offered free of charge to qualified customers.
The SE2528L and SE2560L can be purchased in volumes of 100,000.
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