FDMC8200 minimises conduction and switching losses
A Fairchild Semiconductor product story
Edited by the Electronicstalk editorial team Jul 9, 2009
Fairchild Semiconductor has released a dual Mosfet solution that delivers higher efficiency and power density for notebooks, netbooks, servers, telecom and other DC-DC designs.
The FDMC8200 integrates an optimised control (high-side) and synchronous (low-side) 30V N-Channel Mosfet into one 3 x 3mm MLP module, designed with Fairchild's advanced-performance Powertrench 7 Mosfet technology.
This technology yields an exceptionally low RDS(ON) total gate charge (QG) and Miller Charge (QGD) - enhancements that result in high efficiency by minimising conduction and switching losses.
The FDMC8200 typically features an RDS(ON) of 24mOhm on the high side and 9.5mOhm on the low side.
It can deliver more than 9A of current for mainstream computing applications; the optimised pinout and footprint provide ease of layout and routing, simplifying design.
The FDMC8200 addresses key design challenges of DC-DC applications, space conservation and thermal performance, through its advanced packaging technology and proprietary Powertrench 7 process.
The compact and thermally enhanced 3 x 3mm Power33 MLP package, and Powertrench 7 technology, offer high power density, high power efficiency and excellent thermal performance.
This dual Mosfet is part of a portfolio of advanced Mosfet technology that provides a range of breakdown voltages and packaging technology for efficient power management and low thermal resistance.
This portfolio includes the FDMS9600S and FDMS9620S, integrated FET modules that also significantly reduce board space and enable synchronous buck designs to achieve higher conversion efficiency.
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