NCV840x MOSFETs have integrated protection
An ON Semiconductor product story
Edited by the Electronicstalk editorial team Dec 15, 2009
ON Semiconductor has introduced a range of low-side protected MOSFETs that feature high levels of integrated protection.
Qualified in accordance with the AEC-Q101 standard, devices in the NCV840x range are suitable for use in switching applications operating in harsh automotive and industrial environments.
Designed for robust and reliable operation, the NCV8401, NCV8402, NCV8402D (dual die) NCV8405 all have a range of self-protection features.
These include temperature and current limiting, electrostatic-discharge protection and integrated drain-to-gate clamping for overvoltage protection.
NCV840x drivers can be used to switch a variety of resistive, inductive and capacitive loads and allow design engineers to replace electromechanical relays or discrete circuits with an alternative that is more compact and robust and that has a longer operational life.
All of the devices have a logic-level input.
The NCV8401, NCV8402/D and NCV8403 have a drain-to-source voltage rating (VDSS) of 42V and maximum drain currents (ID) of 33, 2 and 15A respectively.
The NCV8405 is rated to 40VDSS and has a maximum ID rating of 6A.
Gate-to-source voltage for all devices is +/-14V.
All models exhibit low-on-resistance values that enable more energy-efficient system designs.
Respective RDS(ON) values (at 10V) are 23milliohms for the NCV8401; 165 milliohms for the NCV8402/D; 53 milliohms for the NCV8403; and 90 milliohms for the NCV8405.
The devices all have an operating temperature range of -40 to 150C and high electro-static resistance levels (4,000V at a junction temperature of 25C).
Turn-off temperature limit is set at 175C when VGS is 5V and 165C when VGS is 10 V.
The NCV840x devices are available in a Pb-free SOT-223, DPak and SOIC8 packaging.
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