Product category: Discrete Power Devices
News Release from: Oki Electric | Subject: GaN-HEMT
Edited by the Electronicstalk Editorial Team on 18 October 2005
Novel transistor design cuts
amplification costs
Oki Electric has developed a power transistor with dramatically improved amplifying characteristics.
Oki Electric has developed a power transistor with dramatically improved amplifying characteristics This gallium nitride high electron mobility transistor (GaN-HEMT), is formed on a large diameter silicon substrate achieving a world record for transconductance rating of 350mS/mm and maximum oscillation frequency (fmax) of 115GHz
This article was originally published on Electronicstalk on 10 Apr 2002 at 8.00am (UK)
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