Weight metrology proves popular in wafer fabs
Metryx has won orders worth up to $4 million for its revolutionary Mentor high-throughput simple-to-use nondestructive metrology tool that offers atomic layer measurement accuracy.
Innovative metrology equipment specialist Metryx has won orders worth up to $4 million for the company's revolutionary Mentor high-throughput simple-to-use nondestructive metrology tool that offers atomic layer measurement accuracy.
Three Mentor SF3 systems capable of handling up to 60 wafers per hour have been shipped to two different wafer fab sites in Germany and the USA.
A further three Mentor DF3 systems capable of handling up to 70 wafers per hour have been shipped to two different sites in Taiwan.
All the Mentor systems are being used as metrology systems for process control applications during DRAM manufacture.
"The Metryx Mentor technology has now been endorsed by a number of major 200 and 300mm wafer fabs worldwide".
"Leading semiconductor device manufacturers have utilised Mentor's innovative 'nanotechnology weight measurement' technique by installing multiple units, running critical applications in fully automated production environments".
"Weight metrology has proven to be both reliable and cost effective, providing yield improvements and reduced scrap", explained Dr Adrian Kiermasz, Vice President, Business Development of Metryx.
""The key advantages of the Mentor system include its high throughput, low cost of ownership, independency of substrate, wafer size, wafer type and material".
"The measurement technique is also nondestructive and compatible with product, test and blanket wafers".
Following on from the success of the Metryx Mentor system, the company has also recently introduced the Metryx Monitor metrology tool, which has been developed specifically for low volume R and D work in MEMS devices and semiconductors.
The Metryx Monitor system allows substrates to be manually loaded, removing the sophistication of automatic loading, offering considerable cost reduction, while retaining the accuracy and measurement capability to atomic layer differentiation.
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