‘Pmos’
An Electronicstalk guide
Start with the news release EEPROM blocks for program and firmware storage from Austriamicrosystems, which we summarised at the time by saying "Austriamicrosystems' Full Service Foundry business unit has announced a further expansion of its non-volatile memory portfolio for its 0.35um process range.". Several months prior to that, we featured the news release Charger system targets li-ion/polymer batteries from Linear Technology: "Linear Technology has introduced the LTC4070, a small-shunt battery-charger system IC for li-ion/polymer batteries.".
In April 2010, we covered the news from Linear Technology - take a look at DC/DC converter for 50W LED applications which says: "Linear Technology has announced the LT3492, a 2.1MHz DC/DC converter designed to operate as a three-channel constant current LED driver.".
Take a look also at the news release from Torex Semiconductor, Torex Semiconductor introduces XCM519 MCM, as well as Bright answer for dimming backlights from Linear Technology Corp, and LED driver powers three strings of eight from Linear Technology Corp.
Latest stories...
Drivers bridge from logic to power MOSFETs (February 2007)
Family of high-frequency optically isolated MOSFET gate drivers is capable of driving up to 30A/1200V in industrial applications.
Record number of papers for San Francisco IEDM (September 2006)
IMEC will present 17 papers together with its core partners at the IEEE International Electron Devices Meeting from 11th to 13th December 2006 in San Francisco.
Riber brings MBE system to Ge and III-V research (May 2006)
Riber has joined IMEC's Industrial Affiliation Programme on Germanium and III-V devices for CMOS beyond the 22nm node.
Serial EEPROMs shrink into SOT-23 package (February 2006)
Microchip has released the world's first SPI serial EEPROMs in a miniature SOT-23 package.
NiSi integration offers path below 45nm (December 2005)
IMEC has announced a simple CMOS integration scheme of a NiSi gate for NMOS and a Ni2Si gate for PMOS on HfSiON with simultaneous two-step silicidation.
Novel transistor structure cuts standby drain (October 2005)
Oki Electric has developed a new device structure for super low off-leakage current.
Multiple-gate FETs star at VLSI symposium (June 2005)
IMEC is announcing several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices this week at the 2005 Symposium on VLSI Technology.
CMOS devices up performance for less power (April 2005)
Modular 0.35-micron 8in Polar35 process with 3.3 V CMOS devices improve circuit performance while using less power and real estate for analog intensive functions.
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