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Product category: Microprocessors, Microcontrollers and DSPs
News Release from: Oki Electric | Subject: SoI-CMOS transistors
Edited by the Electronicstalk Editorial Team on 10 October 2005
Novel transistor structure cuts standby
drain
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Oki Electric has developed a new device structure for super low off-leakage current.
Oki Electric has developed a new device structure for super low off-leakage current While maintaining the speed of performance of previous devices, the SoI (silicon on insulator)-CMOS transistor structure succeeds in reducing the standby consumption current (off-leakage current) by over 90% compared with previous transistors
This article was originally published on Electronicstalk on 10 Apr 2002 at 8.00am (UK)
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