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News Release from: IMEC
Edited by the Electronicstalk Editorial Team on 09 December 2005
NiSi integration offers path below 45nm
IMEC has announced a simple CMOS integration scheme of a NiSi gate for NMOS and a Ni2Si gate for PMOS on HfSiON with simultaneous two-step silicidation.
At this week's IEEE International Electron Devices Meeting, IMEC announced a simple CMOS integration scheme of a NiSi gate for NMOS and a Ni2Si gate for PMOS on HfSiON with simultaneous two-step silicidation The potential of this novel integration process has been proven with ring oscillator demonstration
This article was originally published on Electronicstalk on 20 Feb 2002 at 8.00am (UK)
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Alternative FUSI approaches such as adding Yb to Ni FUSI allowed further tuning of the work function to lower Vt, enabling dual gate CMOS technologies based on FUSI for (sub)-45nm.
FUSI gates are an interesting approach to overc