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IR unveils family of logic-level Mosfets

An International Rectifier product story
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Edited by the Electronicstalk editorial team May 4, 2009

International Rectifier (IR) has introduced a range of logic-level gate drive trench Hexfet-power Mosfets.

They feature benchmark on-state resistance (RDS[on]) and a high package current rating for high-power DC motors and power tools, industrial batteries and power-supply applications.

Utilising IR's latest trench technology, the family of benchmark Mosfets offers a low RDS(on) at 4.5V VGS to improve thermal efficiency.

Additionally, the devices' higher current rating provides more guard band from unwanted transients and reduces part counts in parallel-type topologies where several Mosfets share high current.

With a package current rating of up to 195A, the TO-220, D2PAK and TO-262 packages deliver a 60 per cent improvement over typical package ratings, while the seven-lead D2PAK further reduces RDS(on) by as much as 16 per cent compared to the standard D2PAK to provide an even more robust option.

Featuring benchmark RDS(on), the logic-level gate drive trench Mosfets can be driven from a microcontroller or a weak battery to deliver improved efficiency at light-load conditions, making them suitable for high-current DC-DC switching and DC motor drive applications.

The family provides a voltage range of 40V to 100V.

Qualified to industrial grade and moisture sensitivity level 1 (MSL1) the devices are available in all standard power packages including TO-220, D2PAK, TO-262 and a seven-lead D2PAK.

The devices are offered lead free and are RoHS compliant.

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