Product category: Discrete Power Devices
News Release from: International Rectifier | Subject: IRGB4056DPbF etc
Edited by the Electronicstalk Editorial Team on 21 April 2006
IGBTs claim motor control savings
Four 600V insulated gate bipolar transistors can reduce power dissipation in inverters by up to 60% in motor control applications up to 2.5kW.
International Rectifier has launched four 600V insulated gate bipolar transistors (IGBTs) that can reduce power dissipation in inverters by up to 60%, in motor control applications up to 2.5kW Copackaged with ultrafast soft recovery diodes, these IGBTs have lower collector-to-emitter saturation voltage and total switching energy than punch-through (PT) and non-punch-through (NPT) type IGBTs
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
Related stories
1kV rad-hard power MOSFET saves satellite space
International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
The combination of low collector-to-emitter saturation voltage and total switching energy of trench IGBTs results in reduced power dissipation and higher power density in motion control applications with wide range of switching frequency conditions such as in air conditioner and refrigerator compressors, vacuum cleaners, washing machines, dishwashers, ventilation fans, industrial drives and circulating pumps.
The trench IGBTs, part of IR's iMotion integrated design platform, increase current density and can deliver up to 60% higher rms current in the same package compared with previous devices on the market.
The reduced power dissipation IGBT can result in a 50% heatsink size reduction.
Other performance benefits include wider square reverse bias safe operating area (RBSOA), up to 175C maximum operating temperature, high peak turn-off capability, positive collector-to-emitter saturation voltage temperature coefficient and short-circuit rating of 5us and high dV/dt induced turn-on immunity.
In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.
The IGBTs are lead-free and RoHS compliant and data sheets and application notes for the IRGB4056DPbF, IIRGB4061DPbF, IRGB4062DPbF and the IRGP4062DPbF are available on the International Rectifier website.
• International Rectifier: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page