Product category: Discrete Power Devices
News Release from: International Rectifier | Subject: IRF6607
Edited by the Electronicstalk Editorial Team on 22 November 2002
FET boosts efficiency
at higher frequencies
The IRF6607 DirectFET MOSFET is specifically designed for synchronous MOSFET switch applications in high-frequency synchronous buck convertors
The IRF6607 DirectFET mosfet is specifically designed for synchronous mosfet switch applications in high-frequency synchronous buck convertors. A buck convertor using a single pair of IRF6607 DirectFET mosfets can deliver up to 30A per phase at 2MHz with 77% efficiency. This is twice the current output than of industry-best SO-8-packaged mosfets.
This article was originally published on Electronicstalk on 22 November 2002 at 8.00am (UK)
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High-frequency buck convertors are used to power gigahertz Intel and AMD microprocessors for notebook computers, high-end desktop PCs and servers.
Next generation microprocessors operate at voltages approaching 1V and escalating frequencies.
Current requirements are increasing rapidly, increasing the need for very fast transient response.
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Transient response has increased from 20 to about 325A/us since 1999, and is projected to grow to 400A/us by next year.
To address these challenges and shrink the large capacitor banks that would be required, buck convertors must operate at frequencies in the 1-2MHz range.
The 30V IRF6607 is housed in industries first SMT package with dual-sided cooling in an SO-8 footprint, and provides significant improvements in conduction and switching losses.
Leveraging the low die-free package resistance of the DirectFET package, the IRF6607 offers an ultra-low on-resistance of 2.7mohm, the lowest available in an SO-8 footprint.
The low gate charge and gate-to-drain charge combine with a package inductance 70% lower than an SO-8-packaged mosfet, enabling low switching losses in the megahertz frequency range.
The high thermal conductivity of the DirectFET package dissipates power easily.
Using a heatsink to remove heat through the top of the package reduces PCB area around each mosfet, shrinking circuit size and reducing PCB trace inductance to eliminate undesirable switching losses.
DirectFET devices have low power dissipation and high thermal conductivity, enabling 30A per phase at 2MHz with only two DirectFET mosfets.
"DC/DC convertor frequencies are reaching new levels, so new approaches are required.
DirectFET mosfets set a new benchmark in efficiency and power density at high frequency, providing designers with a unique discrete solution to deliver fast transient response with a very low part count and in very compact footprints", said Carl Blake, Technical Marketing Manager for the Computing Market at International Rectifier.
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