MOSFETs integrate protection circuitry

A new family of self-protected MOSFETs features an advanced level of integration and delivers superior performance in demanding automotive and industrial applications.

A new family of self-protected mosfets features an advanced level of integration and delivers superior performance in demanding automotive and industrial applications.

The new devices are low-side self-clamped 46V, 48-185mohm mosfets with integrated current limit protection, overtemperature shutdown, overvoltage protection, and electrostatic discharge (ESD) protection.

ON Semiconductor's HDPlus wafer process enables a monolithic design that optimises performance across a wide temperature range.

A selection of integration features are offered, ranging from the industry's first actively clamped, ESD-protected replacement for the commonly utilized 3055 mosfet to fully self-protected mosfets with current and temperature limit capabilities.

"System designers are eager for solutions that reduce component count, improve system reliability, and simplify both hardware and software designs", said Ramesh Ramchandani, ON Semiconductor Vice President and General Manager for the Integrated Power Devices Division.

"Because ON Semiconductor's new SmartDiscrete mosfets integrate protection circuitry traditionally implemented with multiple discrete devices, they are space-saving and highly cost-effective solutions for the development of robust systems".

Protection features are mandatory for applications where a power mosfet must survive high power and/or short circuit conditions.

To address this need, the self-protected circuit design of ON Semiconductor's new SmartDiscrete power mosfets incorporates drain current sensing and limiting.

In the event of a short-circuited load, the current limit circuit protects against current spikes.

If this condition persists, the temperature circuit monitors the junction temperature and will shut off the device when a specified set point is reached - typically 175C.

The internal temperature limit circuit is designed to automatically turn on the main mosfet after the junction temperature decreases by approximately 15C.

The device thermally cycles until the short condition is corrected.

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