Product category: Microprocessors, Microcontrollers and DSPs
News Release from: Freescale Semiconductor
Edited by the Electronicstalk Editorial Team on 07 December 2005
Novel transistor overcomes vertical
challenges
A breakthrough transistor structure overcomes many of the design and manufacturing challenges associated with vertical multigate devices.
Freescale Semiconductor has demonstrated a breakthrough transistor that overcomes many of the design and manufacturing challenges associated with vertical multigate devices The invention, called the inverted T-channel field effect transistor (ITFET), features the industry's first ever combination of vertical and planar thin body structures within a single transistor
This article was originally published on Electronicstalk on 20 Mar 2001 at 8.00am (UK)
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