Product category: Microprocessors, Microcontrollers and DSPs
News Release from: Freescale Semiconductor
Edited by the Electronicstalk Editorial Team on 09 October 2001
SiGe:C process technology slims down to
0.18um
Motorola has disclosed its next-generation 0.18-micron silicon germanium:carbon (SiGe:C) process technology.
Motorola has disclosed its next-generation 0.18-micron silicon germanium:carbon (SiGe:C) process technology This fully modular SiGe:C RF BiCMOS technology has transistors switching up to 110GHz providing good RF power gain and low noise for 3G wireless and gigabit optical communication applications
This article was originally published on Electronicstalk on 20 Mar 2001 at 8.00am (UK)
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