Nonvolatile SRAMs expand to 8Mbit

New 2 and 8Mbit nvSRAMs feature access times as low as 20ns, infinite read, write and recall cycles, and 20-year data retention.

With the addition of two new devices, the range of nonvolatile SRAMs from Cypress Semiconductor now covers densities from 16Kbit to 8Mbit.

The new 2 and 8Mbit devices feature access times as low as 20ns, infinite read, write and recall cycles, and 20-year data retention.

They offer the best solution for applications requiring continuous high-speed writing of data and absolute nonvolatile data security.

Systems requiring nvSRAM functionality include servers, RAID applications, harsh-environment industrial controls, automotive, medical and data communications.

The CY14B102 2Mbit nvSRAM and CY14B108 8Mbit nvSRAM are RoHS-compliant and directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering reliable nonvolatile data storage without batteries.

Data transfers from the SRAM to the device's nonvolatile elements take place automatically at power down.

On power up, data is restored to the SRAM from the nonvolatile memory.

Both operations are also available under software control.

The new nvSRAMs are manufactured on Cypress's S8 0.13um SONOS (silicon oxide nitride oxide silicon) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance.

"With the addition of the 2 and 8Mbit nvSRAMs, Cypress offers the market's most complete portfolio with the broadest distribution and best support", said Robert Dunnigan, vice president of nonVolatile Products business unit at Cypress.

"nvSRAMs offer customers the best solution for high-speed, nonvolatile memory, and these higher density devices enable new applications to take advantage of them".

The 2 and 8Mbit nvSRAMs have an available real-time-clock feature that combines the industry's lowest standby oscillator current with the highest performance integrated memory, enabling event time-stamping supported by nonvolatile memory.

nvSRAMs offer the best alternative for fast, nonvolatile memory.

They reduce board space and design complexity compared with battery-backed SRAMs, and are more economical and reliable than magnetic (MRAM) or ferroelectric (FRAM) memories.

The new products are the latest in a series of nvSRAMs from Cypress, which also includes 16, 64 and 256Kbit, 1 and 4Mbit devices currently shipping in production volumes.

A leader in SONOS process technology, Cypress will use the S8 technology in next generation PSoC mixed-signal arrays, OvationONS laser navigation sensors, programmable clocks and other products.

SONOS is highly compatible with standard CMOS technologies and offers numerous advantages including high endurance, low power, and radiation hardness.

In addition, SONOS provides a more robust, manufacturable and cost-effective solution compared with other embedded nonvolatile memory technologies.

Cypress's 2 and 8Mbit nvSRAMs are currently sampling, with production starting in the third quarter of 2008.

The devices are available in 48-pin FBGA and 44- and 54-pin TSOPII packages.

The extended line of Cypress's nvSRAMs is second-sourced by Simtek Corporation as part of the two companies' collaborative product development efforts.

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