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Product category: Memory Devices and Modules
News Release from: Cypress Semiconductor | Subject: 18Mbit QDR, QDR-II, DDR and DDR-II memories
Edited by the Electronicstalk Editorial Team on 25 July 2003

Quad datarate boosts big memory
bandwidth

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Cypress Semiconductor has begun sampling new families of 18Mbit QDR, QDR-II, DDR and DDR-II memory devices.

Cypress Semiconductor has begun sampling new families of 18Mbit QDR, QDR-II, DDR and DDR-II memory devices Available in 24 configurations, Cypress's new 18Mbit QDR/DDR SRAMs increase system-level bandwidth and accelerate read/write capabilities in a variety of data-intensive applications, including network switches and routers, Fibre Channel and iSCSI storage switches and host bus adapters, low-end servers and semiconductor test equipment

After releasing two 9Mbit products in 2001, this is Cypress's second family of QDR products.

The company will introduce 36 and 72Mbit product families in early 2004.

"Cypress's new QDR, QDR-II, DDR and DDR-II SRAMs expand an already broad portfolio of high bandwidth, low latency Cypress SRAMs that are being used by many of the world's leading networking and storage firms", said Antonio Alvarez, Senior Vice President of the Memory Products Division at Cypress Semiconductor.

"With the advent of our 18Mbit devices, we're delivering a simple migration path to even greater levels of performance, critical to our customers' success".

The QDR Co-Development Team, comprising Cypress, IDT, NEC, Renesas, Samsung, and formerly Micron, has jointly developed specifications for the QDR, QDR-II, DDR and DDR-II SRAM architectures.

Together, they offer their customers pin-compatible products from multiple world-class suppliers who use internally owned fabrication plants and technologies.

Micron was the first Co-Development Partner to introduce an 18Mbit QDR/DDR product, but the company recently departed the SRAM market.

Cypress's 18Mbit product offering will offer its customers a 100% compatible alternate source.

Cypress's new 18Mbit devices operate at clock frequencies up to 250MHz and provide up to 36Gbit/s of bandwidth to increase network capacity.

The products' low initial latency1.5 cycles for QDR-II and DDR-II and one cycle for QDR and DDR maximises the efficiency of algorithmic look-up tables, statistics tracking and data buffering.

In addition, the devices' 165 fBGA package is 40% smaller than alternative solutions.

All the new products are fully compatible with those of the other suppliers in the QDR Co-Development Team.

Cypress's QDR (quad datarate) and QDR-II memories increase bandwidth by supporting separate data inputs and outputs for simultaneous read and write operations.

Independent ports transferring data with a double-datarate interface results in a 4x improvement in data throughput versus comparable synchronous SRAMs.

This provides maximum data throughput, minimal initial latency, and the elimination of data "turnaround" on the databus, which is required in common I/O devices.

Cypress's DDR (double datarate) and DDR-II architectures have the same double-datarate interface as QDR and QDR-II with a common I/O structure for applications that are heavily read oriented or that have ASICs or FPGAs with pin limitations.

In these applications, the DDR and DDR-II architectures offer twice the data bandwidth as traditional synchronous SRAMs with minimal initial latency.

Cypress's 18Mbit QDR, QDR-II, DDR and DDR-II devices are available in 24 configurations.

The company is shipping samples of its CY7C1313V18 and CY7C1305V25 devices now, which will be in full production in Q3, and will begin sampling other SRAM configurations in August.

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