Product category: Analogue and Mixed Signal ICs
News Release from: Bookham | Subject: GaAs MMICs
Edited by the Electronicstalk Editorial Team on 17 September 2002
GaAs MMIC range shows up in Milan
Bookham Technology will launch a portfolio of GaAs MMICs and foundry services at the European Microwave Week 2002, to be held from 24th to 26th September in Milan, Italy
The first new product from the company's increased investment will be a 5W GaAs X-band power amplifier, due to sample in the fourth quarter of 2002. The amplifier will complement the company's existing X-band low noise amplifier (LNA) and driver products. Bookham Technology is building its presence in the GaAs MMIC market by developing its facilities at Caswell, UK, acquired from Marconi Corporation in February 2002.
This article was originally published on Electronicstalk on 17 September 2002 at 8.00am (UK)
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The Caswell foundry has the longest continuous history of GaAs development in the world, going back to 1962, and has over 100 man-years of experience in GaAs MMIC design.
"GaAs foundry services are very much at the forefront of our initial business expansion", says Ray Taylor, Business Manager, RF MMICS and Foundry Products, at Bookham Technology.
"This is a good time for Bookham Technology to raise its profile in RF MMICs as both the military and space markets are fairly buoyant at the moment.
There are lots of satellites in the pipeline for both military and commercial applications".
"We are picking up a lot of enquiries for foundry services - from people who have their own designs that we are asked to process, through to people who supply their product requirements and we do all the design and process work".
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The F20 MESFET process uses 0.5um gate-length devices for use up to 20GHz; both the gain and switch processes have been European Space Agency (ESA) space qualified.
The H40 and H40P processes use 0.2um gate-length low-noise pHEMT technology for devices operating to over 40GHz; the H40P process is a high-power variant, with a breakdown voltage of over 15V.
New investment in the foundry is now moving the GaAs MMIC line from 3 to 6in wafers to drive down the cost of the chips.
A new 0.17um mHEMT process is being developed for applications at even higher frequencies of up to 100GHz.
The company has already doubled its international representation since the beginning of the year, and expects to be present in over 20 national markets, including most of Europe, the USA, India, Japan and South Korea by December.
Visitors to Bookham Technology's stand at EMW 2002 will see information on a wide range of standard GaAs MMIC products operating up to 42GHz, including amplifiers, attenuators, phase switches and switches.
While focused mainly on the aerospace and military microwave markets, Caswell's devices also span commercial professional communications applications, including radio access, point-to-point links and point-to-multipoint links, including wireless LANs, wireless local loops and microwave multipoint distribution systems.
Specific devices to be featured are the established P35-5112, X-band LNA, which has one of the lowest noise figures commercially available, and the P35-5104, a 2-20GHz broadband amplifier, with an outstanding combination of gain/frequency performance and noise figure.
An invited paper will be presented at the technical conference, by Dr Steve Marsh, entitled "GaAs - enabling low cost integration", this will detail, how Bookham Technology, using Caswell's long history and expertise in GaAs, are developing cost disruptive products for the Optical Telecommunications market.
The European Microwave Week 2002 combines a major industry exhibition with three leading conferences: The 32nd European Microwave Conference 2002, the 10th gallium arsenide Application Symposium and the 2002 European Conference on Wireless Technology.
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