Trenchfet power Mosfets give low on-resistance

Vishay Intertechnology has released 20V and 30V p-channel Trenchfet power Mosfets, featuring a +/-20V gate source voltage and low on-resistance, in the SO-8 footprint.

Whereas competing devices with these voltage ratings in the SO-8 footprint offer on-resistance down to 24 milliohms, the Si7633DP offers an ultra-low on-resistance of 3.3 milliohms at 10V and 5.5 milliohms at 4.5V.

These values are 27 per cent lower at 10V and 28 per cent lower at 4.5V than the closest competing 30V device and 28 per cent and 15 per cent lower, respectively, than the closest competing 25V SO-8 device.

The 30V Si7135DP offers an on-resistance of 3.9 milliohms at 10V and 6.2 milliohms at 4.5V.

These values are 13 per cent lower at 10V and 19.5 per cent lower at 4.5V than the closest competing device.

Packaged in the Powerpak SO-8, both Mosfets allow for a 60 per cent higher maximum drain current and 75 per cent higher maximum power dissipation than devices in the SO-8 package.

The devices will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems.

Adaptor switches (switching between the adaptor/wall power and the battery power) are always on and drawing current.

The lower on-resistance of the Si7135DP and Si7633DP translates into lower power consumption, saving power and prolonging battery life between charges.

Vishay has also released the Si4459ADY 30V p-channel Trenchfet power Mosfet in the SO-8 package.

The device offers an on-resistance of 5 milliohms at 10V and 7.75 milliohms at 4.5V.

All devices released are 100 per cent Rg- and UIS-tested and halogen-free.

Samples and production quantities of the Si7135DP and Si7633DP Trenchfet power Mosfets are available now, with lead times of 10 to 12 weeks for larger orders.

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