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Product category: Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si4390DY, Si4392DY, Si7390DP and Si7392DP
Edited by the Electronicstalk Editorial Team on 04 July 2003
Novel MOSFETs promise to boost DC/DC
performance
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A new range of power MOSFETs uses a breakthrough TrenchFET technology to combine greatly reduced switching losses with ultralow on-resistance.
A new range of power mosfets uses a breakthrough TrenchFET technology to combine greatly reduced switching losses with ultralow on-resistance Reducing gate-drain capacitance by half while maintaining superb on-resistance performance, the new Vishay Siliconix WFET power mosfets offer the industry's best on-resistance times gate charge figure of merit: 60% lower than previous-generation devices