Product category: Microprocessors, Microcontrollers and DSPs
News Release from: Texas Instruments (April 2006-)
Edited by the Electronicstalk Editorial Team on 15 June 2007
Hafnium-based dielectric to enhance 45nm
process
High-k dielectrics offer the compatibility, reliability and scalability to continue delivery of high-volume, high-performance and low-power devices through 45 and 32nm process nodes.
Texas Instruments has announced plans to integrate a high-k-value material within the transistors in its most advanced high-performance 45nm chip products For years, high-k dielectrics have been under consideration to address leakage, or power drain, which has become increasingly problematic as transistor dimensions continue to shrink
This article was originally published on Electronicstalk on 8 Jul 2008 at 8.00am (UK)
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