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Product category: Memory Devices and Modules
News Release from: Toshiba Electronics Europe | Subject: TC58FVT64 64Mbit NOR Flash
Edited by the Electronicstalk Editorial Team on 29 June 2001
Shallow trench isolation boosts NOR
Flash memories
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The first 64Mbit NOR Flash memory devices to feature shallow trench insulation deliver space and power savings with higher performance and lower noise than conventional NOR devices.
The first 64Mbit NOR Flash memory devices to feature a shallow trench insulation (STI) silicon structure deliver significant space and power savings while offering higher performance and lower noise operation than devices based on conventional NOR technology Toshiba's TC58FVT64 64Mbit NOR Flash memory is supplied in a 48-pin TSOP, and is available with organisations of either 8M x 8bit or 16M x 4bit