IRF6718 optimised for DC switch applications

International Rectifier (IR) has introduced the IRF6718 Directfet Mosfet, which delivers low on-state resistance for active O-ring and hot-swap applications.

The 25V device is optimised for DC switch applications such as active O-ring, hot swap, and electronic fuse (E-fuse).

Featuring IR's latest generation silicon technology, the IRF6718 is hosted in a large can Directfet package.

Delivering an RDS(on) of 0.5mohm (typical) at 10V Vgs in a 60 per cent smaller footprint and 85 per cent lower profile than a D2PAK, the device reduces conduction losses associated with the pass element to improve the efficiency of the entire system.

Its lower RDS(on) compared with competing devices achieves high efficiency and thermal performance for high-density DC-DC applications such as servers in a smaller footprint than a D2PAK.

Moreover, board space and overall system cost can be reduced when compared with existing solutions as fewer parts are required for a given power loss.

In addition, the IRF6718 provides an improved safe operating area (SOA) capability for E-fuse and hot-swap circuits.

The device is offered lead-free and is RoHS compliant.

The IRF6718 is an expansion of IR's 25V Directfet family targeting DC switch applications.

The IRF6717 medium can and IRF6713 small can Directfets also target DC switch applications.

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