Product category: Discrete Power Devices
News Release from: International Rectifier | Subject: IRHLUB7970Z4 and IRHLUB770Z4
Edited by the Electronicstalk Editorial Team on 06 October 2004
Rad-hard MOSFETs take on bipolar
applications
Two new radiation-hardened logic-level gate drive MOSFETs are designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.
Two new radiation-hardened logic-level gate drive MOSFETs are designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors The general-purpose low-power switching devices are made for harsh environments
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
Related stories
1kV rad-hard power MOSFET saves satellite space
International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
Compared with 2N2222A and 2N2907A bipolar transistors, IR's rad-hard MOSFETs require less energy, switch faster and feature a lower on-state resistance.
Packaged in a UB (3LCC) surface-mount or through-hole package, they are a compact, lightweight, hermetic alternative to bipolar devices.
These rad-hard logic-level MOSFETs offer superior switching performance over their bipolar equivalents and are easier to drive.
The new MOSFETs improve gain and are ideal replacements for bipolar transistors in circuits requiring high tolerance to radiation.
The new devices, IRHLUB7970Z4 and IRHLUB770Z4, can be driven directly from industry-standard logic gates, linear ICs, or microcontrollers that operate from a low-voltage source of 3.3 to 5V.
They are available in screened and commercial off-the-shelf (COTS) versions.
• International Rectifier: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page
Search the Pro-Talk network of sites
