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Product category: Discrete Power Devices
News Release from: International Rectifier | Subject: IRFB42N20D and IRF3703
Edited by the Electronicstalk Editorial Team on 19 March 2001

MOSFETs improve power
density on both sides

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New from International Rectifier are two TO-220-packaged HEXFET power MOSFETs that maximise power density and performance in primary- and secondary-side DC/DC convertor circuits

New from International Rectifier are two TO-220-packaged HEXFET power mosfets that maximise power density and deliver maximum performance in primary- and secondary-side DC/DC convertor circuits. Suitable as replacements for larger TO-247-packaged devices, the new mosfets are specifically designed for high-efficiency, 48V-input isolated DC/DC convertors for telecomms and datacomms systems.

The IRFB42N20D is optimised for primary-side circuits, while the IRF3703 is tuned for secondary-side, sub-3.3V output applications.

The IRFB42N20D is a 200V mosfet with a low gate charge (QG) of 103nC.

The gate charge reduces switching losses so significantly that it out-performs similar mosfets in the larger TO-247 package.

For example, the new IRFB42N20D replaced a competing TO-247 device in a 48V input, 5V output resistor-capacitor-diode (RCD) clamp-forward converter operating at 110kHz.

At full load (40A), the IR device in the TO-220 package delivered better than 1% efficiency improvement over the competing solution in the larger TO-247 package.

The 1%-plus efficiency increase using the new primary-side mosfet is significant since it is achieved in a smaller package.

With increasing power density requirements driving circuit designers to use higher operating frequencies, the low gate charge of the IRFB42N20D is the key enabling factor for faster switching speeds and more efficiency in a smaller package.

High efficiency, low-voltage DC/DC convertors use mosfets instead of Schottky diodes in the secondary circuits.

For sub-3.3V output applications, the IRF3703 has optimised characteristics that improve efficiency in secondary-side synchronous rectification circuits.

The IRF3703 is the best performing 30V mosfet in a TO-220 package, with 2.8mohm device on-resistance, or RDS(on).

This is 20% lower than the nearest competing device.

The IRF3703 RDS(on) performance reduces conduction losses, while the low gate impedance reduces switching and driver losses.

In multiple-output, isolated convertors, circuit board layout is often simplified if the same device can be used in the secondary stages.

The IRF3703 is an excellent choice for secondary stage applications, and reduces bill of material line items as well as time to market.

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