NXP launches LDMOS transistor for L-band radar

NXP Semiconductors has launched its latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications.

The transistor expands its portfolio of iRF power transistors, delivering RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.

Targeted at a wide range of L-band radar applications, NXP's LDMOS L-band RF power transistor sets new standards for efficiency (>50 per cent drain efficiency), gain (17dB) and ruggedness at 500W power level when compared to competing bipolar.

Key performance parameters for NXP's L-band RF transistor (BLL6H1214-500), include: 500W peak output power (at 1.4GHz, 100us pulse width, 25 per cent duty cycle); 17dB gain 50 per cent drain efficiency; improved ruggedness; overdrive without risk up to 5dB Improved pulse droop (0.2dB); supply voltage 50V; and non-toxic packaging and ROHS compliance.

NXP's device combines the power density of bipolar with the advantages of LDMOS technology for L- band radar design, and allows for a replacement of the BeO containing packages by an environmentally friendly ceramic package.

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