Product category: Discrete Power Devices
News Release from: NXP Semiconductors | Subject: BISS transistors
Edited by the Electronicstalk Editorial Team on 09 March 2007
Transistors claim breakthrough in small
signal
Low-saturation-voltage transistors reduce power loss by 80% compared with general-purpose devices.
NXP has released a new generation of low-saturation-voltage transistors, which reduces power loss by 80% compared with general purpose transistors The new BISS (breakthrough in small signal) transistors from NXP enable ultralow saturation voltage - below 60mV at 1A - and provide high circuit efficiency, lower energy consumption, and reduce heat generation of portable battery-powered devices such as notebooks, PDAs and digital cameras
This article was originally published on Electronicstalk on 5 May 2003 at 8.00am (UK)
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The advanced BISS bipolar transistors can also be used in industrial and automotive applications requiring low equivalent on-resistance.
"Excellence in energy savings is a major focus for Asustek and a critical factor in achieving the world's first TCO99 certification for notebook computers", said Jeff Cheng, Deputy Director, Asus.
"By working with NXP, we have access to an extensive portfolio of high-quality BISS transistors that enable us to design innovative, high-performance computers, communications and consumer electronics solutions at the best price point possible".
With a maximum collector current of 5.8A, the third-generation BISS transistors use mesh-emitter technology to reduce collecter-emitter saturation resistance and to enable higher current capabilities, as well as an ultralow saturation voltage parameter.
The BISS transistors can be used to improve efficiency in medium-power DC/DC conversion, load switches, high side switches, motor drivers, backlight inverter applications and strobe flash units, as well as battery chargers.
NXP currently has more than 120 types of BISS transistors available in high-volume production.
"Savvy consumers today expect longer standby times for portable devices and are demanding energy efficiency in all electronics devices", said Jens Schnepel, marketing manager, NXP Semiconductors.
"Our third-generation BISS transistors are a compelling, cost-effective alternative for OEMs designing medium-power devices for high-volume production".
The low-saturation-voltage BISS transistors are available now in three plastic surface-mounted packages: SOT457 (with six leads); SOT89 (with a collector pad for good heat transfer and three leads); and SOT223 (with increased heatsink and four leads).
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