Product category: Discrete Power Devices
News Release from: NXP (formerly Philips Semiconductors) | Subject: HPA TrenchMOS MOSFETs
Edited by the Electronicstalk Editorial Team on 23 July 2002
Trench MOSFETs reduce automotive on-resistance
Philips has developed a new family of leading-edge MOSFETs for automotive applications
Philips has developed a new family of leading-edge mosfets for automotive applications. The HPA (high performance automotive) TrenchMOS family enables reduced on-resistance, improved ruggedness and better switching for high-current applications such as electronic power assisted steering (EPAS), integrated starter alternator (ISA) and other major motor drive applications.
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The HPA TrenchMOS family of mosfets builds on Philips' proven trench technology to bring improved all-round performance to automotive load driving.
The latest family uses an advanced submicron process to provide substantial improvements in performance and optimisation of devices to meet the stringent demands of automotive power applications.
Devices are available in all of the common automotive breakdown voltage grades of 30, 40, 55, 75 and 100V, and are qualified to the automotive electronics standard AEC Q101 for automotive discrete semiconductors.
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"The HPA TrenchMOS family demonstrates Philips' innovation and continued lead in Trench technology for automotive", said Steve Sellick, international product marketing manager for Philips Semiconductors' In-vehicle Power Group.
"This is an important extension to Philips' power semiconductor portfolio, which will enable us to meet both current and future technical demands of higher power automotive applications.
With this new family we have quickly qualified a wide range of products in recognition of the fact that our customers need to optimise designs as technical and cost pressures increase".
The new family improves specific resistance by at least 25% making for much lower dissipation in standard discrete power packages.
The lowest typical on-resistance figure for a TO220 device is now down at 2.3mohm with a maximum of 2.7mohm.
Submicron trench widths reduce the gate-drain capacitance giving low gate charge, which enables faster switching.
Ruggedness - an increasingly important factor for high current applications - has also been substantially improved.
Further additions to the range will follow later in 2002 including DPAK devices with on-resistance as low as 7mohm.
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