Product category: Reference Designs
News Release from: NXP (formerly Philips Semiconductors) | Subject: GSM/UMTS RF reference design
Edited by the Electronicstalk Editorial Team on 20 February 2002
RF reference design
for GSM/UMTS handsets
Philips Semiconductors has released what it reckons is the world's first dual-mode RF reference design for GSM/UMTS handsets
Philips Semiconductors has released what it reckons is the world's first dual-mode RF reference design for GSM/UMTS handsets, providing manufacturers with a complete RF system for the test and evaluation of 2.5 and 3G mobile phones. The new 48 x 26mm2 single-side PCB is comparable in sise to the current radios of single-mode GSM phones, and will enable handset manufacturers to produce dual-mode, GSM dual-band/WCDMA radio PCBs.
This article was originally published on Electronicstalk on 20 February 2002 at 8.00am (UK)
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The reference design is the first on the market to include all of the RF components needed to build a GSM/UMTS cellular handset suitable for WCDMA FDD modulation.
The highly integrated RF architecture also reduces the number of external components optimising the sise and cost of the PCB.
"The dual-mode RF reference design once again highlights our RF leadership and system expertise in cellular applications", said Jean-Marc Lemenager, Cellular RF product marketing manager, Philips Semiconductors.
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"Our RF technology has produced a complete solution that enables handset manufacturers to produce low cost, highly integrated, 2.5G and 3G handsets.
It will help RF designers reduce design time and speed up time-to-market as 3G technology takes off in 2002".
Philips Semiconductors' ability to offer customers highly integrated complete RF solutions for radio PCBs - based on best-in-class RF QUBiC technology- makes it the supplier of choice for module makers and handset manufacturers.
The circuit board is designed around a complete 3G RF chipset using the low cost, high integration 0.25um QUBiC4 silicon process technology, and includes the 3G sero IF transmit and receive components the UAA3580 and UAA3581, and silicon power amplifier (PA) UAA3592.
The GSM part of the RF reference design is built around the proven 2.5G near sero IF transceiver IC the UAA3536, providing clock frequency to the 2.5 and 3G RF functionality, and the highly efficient 8 x 10 mm GaAs PA module CGY2017 with its 4 x 4mm power controller IC UBA1711.
Samples of the complete RF reference design with radio chains for both GSM and UMTS are now available for evaluation purposes, with 3G RF chipset volume production scheduled for Q4 2002.
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