IPD2 process technology for circuit designers

ON Semiconductor has introduced an integrated passive device (IPD) process technology for RF system-in-package applications in portable electronics equipment.

The IPD2 process is an enhancement of the company's existing HighQ copper (Cu) on silicon (Si) IPD technology.

It features a second 5um copper layer that increases inductor performance, allows greater flexibility and supports the design of precise, cost-effective IPDs.

The HighQ IPD2 process utilises advanced 8in wafer technology.

Typical designs include baluns, low pass filters, band pass filters and diplexers used in portable and wireless applications.

Here, IPD2-based designs provide benefits for circuit designers including reduced cost, reduced thickness, small footprint and higher performance that equates to longer battery life.

ON Semiconductor offers fully featured design tools and design support plus rapid prototyping capabilities for its IPD2 process technology.

These enable potential users to quickly and cost-effectively assess whether their less sophisticated discrete or integrated PCB solutions, thicker and more costly ceramic solutions, or more expensive Gold (Au) on Gallium Arsenide (GaAs) based IPDs are suitable for conversion.

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