Low-voltage MOSFETs shrink size and on-resistance

Further expanding its portfolio of industry-leading trench technology devices, ON Semiconductor has released eight new N-channel and P-channel, low-voltage trench MOSFETs.

Further expanding its portfolio of industry-leading trench technology devices, ON Semiconductor has released eight new N-channel and P-channel, low-voltage trench MOSFETs.

These devices reduce resistance between drain and source (on-resistance) to improve overall power circuit efficiency by 30% in portable products when compared with similarly packaged competitive solutions.

The new devices are small signal, 20V MOSFETs specifically designed for use in -430 to -950mA applications such as power load switches, power supply convertor circuits and the battery management of cellphones, digital cameras, PDAs, pagers, media players and portable GPS systems.

Using ON Semiconductor's trench technology, these new low-voltage MOSFETs boost channel length and equivalent channel density.

This enables greater current conduction which delivers 60% lower on-resistance than comparably packaged MOSFETs offered today.

Available in three tiny (1.6 x 1.6mm) low profile (0.6 to 1.0mm) packages, these trench MOSFETs conserve valuable board space.

Because MOSFETs are inherently susceptible to ESD damage - and the smaller the package the higher the risk of ESD damage - ON Semiconductor has integrated Zener diodes into the gates of the trench MOSFET to provide superior ESD protection.

Overall, these packaging, performance and integration improvements work to further simplify overall board design and free up additional board space.

"ON Semiconductor trench technology realises the highest channel density in the industry and delivers the best-in-class on-resistance performance for a given package footprint", said David Garafano, ON Semiconductor General Manager of Power FET Products.

"By combining this trench technology and the company's ultrasmall packaging technology, ON Semiconductor has developed a series of low-voltage MOSFETs that deliver superior on-resistance, reduce power loss and improve current conduction".

"As such, these devices improve overall power circuit efficiency by up to 30% and greatly assist our customers in improving battery efficiency in their portable products".

The NTA4151PT1, NTE4151PT1, NTZS3151PT1 and NTZD3152PT1 are P-channel MOSFETs for high-side load switching of up to 850mA.

Both single and dual modes are offered.

The NTA4153NT1, NTE4153NT1 and NTZD3154NT1 are N-channel MOSFETs for low-side load switches up to 915mA.

Both single and dual modes are offered.

The NTZD3155CT1 is a complementary N-channel and P-channel combination for integrated load switching or low current DC/DC conversion Each device is available in three low-profile, 1.6 x 1.6mm packages.

The six-lead, 0.6mm profile SOT-563 and the three-lead, 0.8mm profile SC-89 are flat-lead packages.

The three-lead, 1.0mm profile SC-75 is a gullwing device.

The flat-lead package provides additional thermal performance and height improvement over the industry standard gullwing package.

The devices are priced between $0.10 and $0.12 per unit in 10,000-unit quantities.

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