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Product category: Discrete Power Devices
News Release from: NEC | Subject: GaN power transistor amplifier
Edited by the Electronicstalk Editorial Team on 21 August 2006
GaN transistor raises basestation power
density
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A compact GaN power transistor amplifier boasts the world's highest output power level of 400W while featuring low distortion characteristics for 3G basestations.
NEC Corporation has developed a compact gallium nitride (GaN) power transistor amplifier, which boasts the world's highest output power level of 400W while featuring low distortion characteristics, for third generation (3G) basestations This amplifier is composed of a single transistor package, which achieves the world's greatest power output amplification under a W-CDMA scheme, without using any power-combining circuits
This article was originally published on Electronicstalk on 18 Jul 2006 at 8.00am (UK)