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Product category: Intellectual Property Cores
News Release from: NEC | Subject: 5T2MTJ cell
Edited by the Electronicstalk Editorial Team on 18 July 2006
MRAM cell technology for embedding
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NEC has developed magnetoresistive random access memory cell technology suitable for high speed memory macro embedded in next generation system LSIs.
NEC Corporation has succeeded in developing new magnetoresistive random access memory (MRAM) cell technology suitable for high speed memory macro embedded in next generation system LSIs The newly developed cell technology includes three key elements; a 2T1MTJ (two transistors and one magnetoresistive tunneling junction) cell structure to accelerate write mode cycle time, a 5T2MTJ cell structure to accelerate read mode cycle time and a write-line-inserted MTJ to reduce write current