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Ramtron takes Nassda for memory simulation

A Nassda Corp product story
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Edited by the Electronicstalk editorial team Jul 12, 2002

Ramtron International has adopted Nassda's HSIM hierarchical full-chip simulator and analysis tool for use in the development of Ramtron's memory technologies under a license agreement.

Ramtron International has adopted Nassda's HSIM hierarchical full-chip simulator and analysis tool for use in the development of Ramtron's memory technologies under a license agreement.

Under the terms of the agreement, Nassda will license HSIM to Ramtron for use in development flows for all Ramtron products including Enhanced SRAM and ferroelectric random access memory (FRAM).

For this agreement, Nassda augmented HSIM with direct support for ferroelectric capacitor elements the ferroelectric crystals that lie at the core of Ramtron's next-generation FRAM memory technology.

Prior to this enhancement, HSIM users had to model ferroelectric capacitors with redundant subcircuits that did not provide optimal performance.

With direct support of transistor-level circuits containing ferroelectric capacitors, users gain the full advantage of HSIM's high capacity, accuracy and performance.

"Ramtron's patented FRAM products combine high-performance and low-power operation with the ability to retain data without power", said Craig Rhodine, Chief Operating Officer at Ramtron.

"With the addition of ferroelectric crystal elements, Nassda's HSIM delivers the high speed, capacity and accuracy that we need to verify innovative FRAM designs for Ramtron and its foundry partners".

"As memory continues to grow proportionally in SoCs, we see new low-power, nonvolatile technologies from innovative companies such as Ramtron becoming more prevalent", said Sang Wang, CEO of Nassda.

"The addition of direct support for ferroelectric capacitors to HSIM demonstrates Nassda's commitment to continue addressing the industry's most challenging circuit verification requirements.

We're pleased to be working with Ramtron in providing this capability for FRAM development".

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