Product category: Discrete Power Devices
News Release from: Freescale Semiconductor | Subject: MRF6VP11KH
Edited by the Electronicstalk Editorial Team on 06 June 2007
RF transistor makes powerful claims
Power transistor delivers pulsed RF output power of 1kW at 130MHz and features the highest drain efficiency and power gain of any device in its class.
Freescale Semiconductor has unveiled the world's highest-power LDMOS RF power transistor The MRF6VP11KH device delivers pulsed RF output power of 1kW at 130MHz and features the highest drain efficiency and power gain of any device in its class
This article was originally published on Electronicstalk on 20 Mar 2001 at 8.00am (UK)
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This ultra-efficient transistor is the latest example of Freescale's commitment to deliver the industry's most innovative RF power solutions for industrial, scientific and medical (ISM) markets.
It operates at 50V, offers distinct advantages over bipolar and MOSFET devices, and provides the power required for equipment such as magnetic resonance imaging (MRI) systems, CO2 lasers, plasma generators and other systems.
The high gain at an unprecedented power level drastically reduces the number of parts required by up to 70%