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Product category: Microprocessors, Microcontrollers and DSPs
News Release from: Freescale Semiconductor
Edited by the Electronicstalk Editorial Team on 31 January 2006
Novel materials unite GaAs and MOSFET
technologies
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A breakthrough device combines the high performance of GaAs semiconductor compounds with the advantages of traditional MOSFET technology and its scaling laws.
Freescale Semiconductor has developed the industry's first device that combines the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect transistor (MOSFET) technology and its scaling laws Freescale's breakthrough enables the development of new classes of power amplifier and low-power ultrafast semiconductors that significantly shrink the size and boost the performance of end devices
This article was originally published on Electronicstalk on 20 Mar 2001 at 8.00am (UK)