Product category: Communications ICs (Wireless)
News Release from: Freescale Semiconductor | Subject: MRF7S38075H
Edited by the Electronicstalk Editorial Team on 20 January 2006
RF transistors meet WiMAX basestation
demands
Seventh-generation high-voltage RF LDMOS technology enables the RF power amplifier performance required for use in WiMAX basestations operating in the 3.5GHz band.
With its seventh-generation high-voltage (HV7) RF LDMOS technology, Freescale Semiconductor has achieved the RF power amplifier performance required for use in WiMAX basestations operating in the 3.5GHz band Freescale's achievement marks the first time RF laterally diffused metal oxide semiconductor (LDMOS) technology from any manufacturer has met these challenges
This article was originally published on Electronicstalk on 20 Mar 2001 at 8.00am (UK)
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Freescale, which already offers a portfolio of 12V GaAs pseudomorphic high electron mobility transistor (PHEMT) products, plans to continue development of high-voltage GaAs PHEMT technology that will result in higher-power GaAs devices for use in WiMAX system designs, as well as other applications between 2 and 6GHz.
By offering power transistors in RF LDMOS and GaAs PHEMT technology, Freescale's RF solutions support virtually any high-power wireless infrastructure application - with LDMOS performance up to 3.8GHz and GaAs PHEMT performance up to 6GHz.
"With the latest advancements in our HV7 RF LDMOS technology, Freescale is well positioned to serve the future of WiMAX and other high-frequency markets", said Gavin P Woods, Vice President and General Manager of Freescale's RF Division.
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"Our high-voltage GaAs technology developments will continue to provide the highest level of efficiency of any competitive products in the marketplace, while extending our infrastructure presence to 6GHz".
WiMAX systems use a 64 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal.
QAM OFDM signalling presents some unique challenges to the power amplifier designer.
RF power transistor linearity in back-off is critical, not only in its spectral form with mask requirements, but also in its quadrature form with the EVM (error vector magnitude) requirement.
Prior to this announcement, silicon LDMOS technology did not provide an acceptable level of RF power performance at 3.5GHz.
This meant that compound semiconductor devices, such as GaAs PHEMTs, were the only choice available for designers.
Freescale's advanced 3.5GHz HV7 LDMOS devices now offer the efficiency, linearity and EVM performance required by WiMAX systems, providing designers with a choice between compound semiconductors and silicon LDMOS.
Samples of the initial 3.5GHz LDMOS device are available now.
The MRF7S38075H is a 75W P1dB RF transistor capable of 42dBm (16W) average power while meeting WiMAX performance requirements over the 3.5GHz band.
In addition, samples of 40 and 10W P1dB 3.5GHz devices are expected in February 2006.
These three advanced LDMOS devices round out Freescale's existing portfolio of RF power transistors targeting the emerging WiMAX/WiBRO bands at 2.3, 2.5 and 3.5GHz.
Although advanced HV7 LDMOS devices complement 12V GaAs PHEMT devices for 3.5GHz WiMAX applications, the new high-voltage GaAs devices currently under development will operate up to 6GHz.
This makes them an excellent choice for WiMAX and other wireless applications operating in this frequency range.
With an operating voltage above 20V, the GaAs devices will achieve output powers as high as 100W while still meeting the stringent demands of digitally modulated systems.
Samples of Freescale's first high-voltage GaAs PHEMTs are expected to be available in Q3, 2006.
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