Product category: Discrete Power Devices
News Release from: Freescale Semiconductor
Edited by the Electronicstalk Editorial Team on 27 June 2002
Novel insulator promises faster MOSFET
structures
Motorola has been working with Nanjing University and the Institute of Physics of Chinese Academy of Sciences to characterise the material properties of lanthanum aluminate films.
Motorola has been working with Nanjing University and the Institute of Physics of Chinese Academy of Sciences to characterise the material properties of lanthanum aluminate films These properties make this material one of the strongest potential candidates for a new gate insulator for smaller, faster CMOS integrated circuits of the future
This article was originally published on Electronicstalk on 20 Mar 2001 at 8.00am (UK)
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By pushing out the limits of the semiconductor industry's "Moore's Law", thereby enabling continued scaling down in chip size, lanthanum aluminate (LAO) and lanthanum aluminum oxynitride (LAON) could replace silicon dioxide as a gate dielectric in mosfet devices for the 65nm technology node and beyond without requiring extensive modification of the manufacturing equipment or process flow.
This prognosis results from a two-year joint research project focused on high dielectric constant materials between Motorola and two members of China's top research community, Nanjing University and Institute of Physics of CAS.
The combination of separate, concurrent research between Motorola and each institution over this period has developed into a strategic research partnership among the three organizations.