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Product category: Design and Development Software
News Release from: IMEC
Edited by the Electronicstalk Editorial Team on 21 March 2003
Collaboration produces new-generation
SiGe process
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IMEC and National Semiconductor are jointly developing a 0.18-micron and follow-up generation of silicon germanium (SiGe)-based BiCMOS process technology optimised for low power applications.
IMEC and National Semiconductor are jointly developing a 0.18-micron and follow-up generation of silicon germanium (SiGe)-based BiCMOS process technology optimised for low power applications Targeted at low power applications, the joint process development with IMEC will enable National Semiconductor to offer a 0.18-micron SiGe-based BiCMOS process by December 2003 for its South Portland, Maine manufacturing facility
This article was originally published on Electronicstalk on 20 Feb 2002 at 8.00am (UK)