Product category: IC and Hybrid Processing Equipment
News Release from: Hitachi Europe
Edited by the Electronicstalk Editorial Team on 10 August 2006
Magnetoresitive effect could boost
storage density
Researchers have demonstrated a novel effect, called coulomb blockade anisotropic magnetoresistance, that points to new classes of nonvolatile logic circuits.
A team of researchers from Hitachi Cambridge Laboratory, the Czech Institute of Physics, the Universities of Cambridge and Nottingham have demonstrated a novel effect, called coulomb blockade anisotropic magnetoresistance (CBAMR) CBAMR allows voltage control of this magnetoresitive effect and therefore the development of nonvolatile logic circuits
This article was originally published on Electronicstalk on 16 Feb 2001 at 8.00am (UK)
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To generate this effect the team has created a si